SI1499DH-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 8V 1.6A SC70-6
$0.70
Available to order
Reference Price (USD)
3,000+
$0.28815
6,000+
$0.26945
15,000+
$0.26010
30,000+
$0.25500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI1499DH-T1-E3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SI1499DH-T1-E3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
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