SI1922EDH-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 1.3A SOT-363
$0.43
Available to order
Reference Price (USD)
3,000+
$0.16245
6,000+
$0.15255
15,000+
$0.14265
30,000+
$0.13572
75,000+
$0.13500
Exquisite packaging
Discount
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Optimize your electronic projects with the SI1922EDH-T1-GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SI1922EDH-T1-GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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