SI1988DH-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 1.3A SC-70-6
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The SI1988DH-T1-GE3 by Vishay Siliconix is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the SI1988DH-T1-GE3 ensures consistent and dependable performance. Vishay Siliconix's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 168mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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