SI2301CDS-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 3.1A SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.10400
6,000+
$0.09850
15,000+
$0.09025
30,000+
$0.08475
75,000+
$0.07650
Exquisite packaging
Discount
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Upgrade your designs with the SI2301CDS-T1-E3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI2301CDS-T1-E3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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