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SI2301S-2.3A

MDD
SI2301S-2.3A Preview
MDD
MOSFET SOT-23 P Channel 20V
$0.20
Available to order
Reference Price (USD)
1+
$0.19850
500+
$0.196515
1000+
$0.19453
1500+
$0.192545
2000+
$0.19056
2500+
$0.188575
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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