SI2316DS-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 2.9A SOT23-3
$0.86
Available to order
Reference Price (USD)
3,000+
$0.27466
6,000+
$0.25572
15,000+
$0.24625
30,000+
$0.24108
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SI2316DS-T1-E3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI2316DS-T1-E3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
NXP USA Inc.
BUK968R3-40E,118
IXYS
IXTA3N100P
STMicroelectronics
STD6N62K3
Infineon Technologies
IRFL024ZTRPBF
IXYS
IXTA08N100P
Goford Semiconductor
G40P03K
onsemi
FDMC8878
IXYS
IXFT44N50Q3
STMicroelectronics
STW20NM60FD
Infineon Technologies