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SI3442BDV-T1-E3

Vishay Siliconix
SI3442BDV-T1-E3 Preview
Vishay Siliconix
MOSFET N-CH 20V 3A 6TSOP
$0.62
Available to order
Reference Price (USD)
3,000+
$0.22540
6,000+
$0.21086
15,000+
$0.19632
30,000+
$0.18614
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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