SI3443CDV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 5.97A 6TSOP
$0.65
Available to order
Reference Price (USD)
3,000+
$0.24368
6,000+
$0.22883
15,000+
$0.21398
30,000+
$0.20358
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI3443CDV-T1-E3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SI3443CDV-T1-E3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Fairchild Semiconductor
HUFA75852G3
Infineon Technologies
IPD65R225C7ATMA1
STMicroelectronics
STP1N105K3
Fairchild Semiconductor
ISL9N306AS3ST
Vishay Siliconix
SI7139DP-T1-GE3
IXYS
IXTX40P50P
Infineon Technologies
IPD03N03LA G
Vishay Siliconix
SIR182DP-T1-RE3
Nexperia USA Inc.
PXP012-30QLJ
Microchip Technology