SI4114DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 20A 8SO
$1.78
Available to order
Reference Price (USD)
2,500+
$0.87175
5,000+
$0.84150
12,500+
$0.82500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI4114DY-T1-E3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI4114DY-T1-E3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IRF6727MTRPBF
Alpha & Omega Semiconductor Inc.
AON6578
Vishay Siliconix
IRFD214PBF
Infineon Technologies
SPP02N60C3
NXP USA Inc.
PMV30UN,215
onsemi
NVTYS004N04CTWG
EPC
EPC2054
Infineon Technologies
SPA17N80C3XKSA1
Toshiba Semiconductor and Storage
SSM3K116TU,LF
onsemi