SI4330DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 6.6A 8-SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the SI4330DY-T1-GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SI4330DY-T1-GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Vishay Siliconix
SI5905DC-T1-GE3
Renesas Electronics America Inc
HAT2038RWS-E
Rohm Semiconductor
QS8J12TCR
Alpha & Omega Semiconductor Inc.
AO4616L_102
Renesas Electronics America Inc
UPA679TB-T1-A
Infineon Technologies
IRF5810TRPBF
onsemi
FDG6318P
Diodes Incorporated
ZXMD63C03XTA
Vishay Siliconix
SI5933DC-T1-E3
Rohm Semiconductor