SI4850BDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 8.4A/11.3A 8SO
$1.03
Available to order
Reference Price (USD)
2,500+
$0.46494
5,000+
$0.44311
12,500+
$0.42752
25,000+
$0.42525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4850BDY-T1-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SI4850BDY-T1-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
IXYS
IXFH270N06T3
Infineon Technologies
SPD03N60C3ATMA1
STMicroelectronics
SCTH35N65G2V-7
STMicroelectronics
STFH24N60M2
Panjit International Inc.
PJA3409-AU_R1_000A1
Rohm Semiconductor
RF4C050APTR
Microchip Technology
APT20M18LVFRG
NXP USA Inc.
BUK7535-55A,127
IXYS
IXTP220N04T2
Infineon Technologies