SI5975DC-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 12V 3.1A CHIPFET
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The SI5975DC-T1-E3 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SI5975DC-T1-E3 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3.1A
- Rds On (Max) @ Id, Vgs: 86mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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