SI7157DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 60A PPAK SO-8
$1.62
Available to order
Reference Price (USD)
3,000+
$0.73144
6,000+
$0.69710
15,000+
$0.67257
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI7157DP-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI7157DP-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Alpha & Omega Semiconductor Inc.
AOB12N50L
STMicroelectronics
STF6N90K5
Fairchild Semiconductor
FDMC6296
Alpha & Omega Semiconductor Inc.
AOB27S60L
Nexperia USA Inc.
BUK9Y14-40B,115
UnitedSiC
UF4C120053K4S
Infineon Technologies
IPB180N04S400ATMA1
IXYS
IXTX90P20P
Vishay Siliconix
SIHS20N50C-E3
Vishay Siliconix