Shopping cart

Subtotal: $0.00

SI7454DDP-T1-GE3

Vishay Siliconix
SI7454DDP-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 100V 21A PPAK SO-8
$1.63
Available to order
Reference Price (USD)
3,000+
$0.73800
6,000+
$0.70335
15,000+
$0.67860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Related Products

Microchip Technology

LP0701N3-G

Infineon Technologies

IPP08CNE8NG

Renesas Electronics America Inc

RJK5033DPD-00#J2

NXP Semiconductors

BSP100,135

Infineon Technologies

IPD50N10S3L16ATMA1

Nexperia USA Inc.

PSMN7R0-100PS,127

Microchip Technology

VN3205N8-G

Toshiba Semiconductor and Storage

TK60F10N1L,LXGQ

Top