SI7949DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 60V 3.2A PPAK SO-8
$1.72
Available to order
Reference Price (USD)
3,000+
$0.84005
6,000+
$0.81090
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI7949DP-T1-GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SI7949DP-T1-GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.2A
- Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
Diodes Incorporated
DMN61D9UDWQ-13
Vishay Siliconix
SI1553CDL-T1-BE3
Diodes Incorporated
DMP3056LSDQ-13
Fairchild Semiconductor
NDS9953A
Diodes Incorporated
DMN3055LFDB-7
onsemi
FDMC7200S
Vishay Siliconix
SQJ952EP-T1_GE3
Alpha & Omega Semiconductor Inc.
AOD607A
Infineon Technologies
IPG20N04S408ATMA1
Fairchild Semiconductor