SI7994DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 60A PPAK SO-8
$3.88
Available to order
Reference Price (USD)
3,000+
$2.07879
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the SI7994DP-T1-GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SI7994DP-T1-GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
- Power - Max: 46W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
Nexperia USA Inc.
BUK9K6R8-40EX
Alpha & Omega Semiconductor Inc.
AON6906A
Sanken
SMA5132
Diodes Incorporated
DMT3020LFDB-13
Harris Corporation
RF1S17N06L
onsemi
FDMD8630
Nexperia USA Inc.
BUK9K13-40HX
onsemi
FDMC9430L-F085
Vishay Siliconix
SQJB68EP-T1_GE3
onsemi