SI8416DB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 8V 16A 6MICRO FOOT
$0.74
Available to order
Reference Price (USD)
3,000+
$0.28710
6,000+
$0.26730
15,000+
$0.25740
30,000+
$0.25200
Exquisite packaging
Discount
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Enhance your electronic projects with the SI8416DB-T2-E1 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SI8416DB-T2-E1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-Micro Foot™ (1.5x1)
- Package / Case: 6-UFBGA
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