SIA929DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 30V 4.5A SC70-6
$0.67
Available to order
Reference Price (USD)
3,000+
$0.27459
6,000+
$0.25677
15,000+
$0.24786
30,000+
$0.24300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIA929DJ-T1-GE3 by Vishay Siliconix is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the SIA929DJ-T1-GE3 offers superior functionality and longevity. Trust Vishay Siliconix to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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