SIB417EDK-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 8V 9A PPAK SC75-6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.44280
Exquisite packaging
Discount
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The SIB417EDK-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SIB417EDK-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-75-6
- Package / Case: PowerPAK® SC-75-6
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