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SIB457EDK-T1-GE3

Vishay Siliconix
SIB457EDK-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 20V 9A PPAK SC75-6
$0.58
Available to order
Reference Price (USD)
3,000+
$0.21660
6,000+
$0.20340
15,000+
$0.19020
30,000+
$0.18096
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-75-6
  • Package / Case: PowerPAK® SC-75-6

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