SIE810DF-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 60A 10POLARPAK
$2.05
Available to order
Reference Price (USD)
3,000+
$1.93812
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIE810DF-T1-E3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SIE810DF-T1-E3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK® (L)
- Package / Case: 10-PolarPAK® (L)
Related Products
Infineon Technologies
IPB05N03LA
Diodes Incorporated
ZXMN7A11GTA
Renesas Electronics America Inc
RJK4006DPP-G1#T2
Vishay Siliconix
SIHG61N65EF-GE3
Infineon Technologies
IAUC120N04S6N013ATMA1
Vishay Siliconix
SQ2310ES-T1_GE3
Infineon Technologies
IPD50N03S4L06ATMA1
onsemi
NTMFS4898NFT1G
NXP USA Inc.
BUK9E4R9-60E,127
Nexperia USA Inc.