SIE874DF-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 60A 10POLARPAK
$2.46
Available to order
Reference Price (USD)
3,000+
$1.20285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIE874DF-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIE874DF-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK® (L)
- Package / Case: 10-PolarPAK® (L)
Related Products
STMicroelectronics
STP3LN62K3
Infineon Technologies
IPD80R750P7ATMA1
Vishay Siliconix
SQJQ140E-T1_GE3
Infineon Technologies
IRL3705NSTRLPBF
Vishay Siliconix
SIHG039N60EF-GE3
Infineon Technologies
IPA70R600P7SXKSA1
Infineon Technologies
IRF540ZLPBF
Infineon Technologies
IRFZ44ESTRRPBF
Panjit International Inc.
PJP60R290E_T0_00001
Panjit International Inc.