SIHA21N60EF-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 21A TO220
$2.38
Available to order
Reference Price (USD)
1+
$4.44000
10+
$3.96300
100+
$3.24950
500+
$2.63126
1,000+
$2.21914
3,000+
$2.10818
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIHA21N60EF-E3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIHA21N60EF-E3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FDN336P
Infineon Technologies
IRF6215STRLPBF
Central Semiconductor Corp
CMUDM7004 TR PBFREE
Nexperia USA Inc.
PMPB43XPE,115
NXP USA Inc.
PMV60EN,215
Fairchild Semiconductor
FQAF19N20
Diodes Incorporated
BS107P
Nexperia USA Inc.
PSMN7R6-60BS,118
Micro Commercial Co
MCU80N06A-TP
Infineon Technologies