SIHA21N65EF-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 21A TO220
$2.77
Available to order
Reference Price (USD)
1,000+
$2.75028
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHA21N65EF-E3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FDP8441
Panjit International Inc.
PJC7403_R1_00001
Renesas Electronics America Inc
RJK5014DPP-00#T2
NXP USA Inc.
PMCM4401VPE084
Vishay Siliconix
SIR4602LDP-T1-RE3
STMicroelectronics
STD2NC45-1
Rohm Semiconductor
RQ5E020SPTL
STMicroelectronics
STWA50N65DM2AG
Toshiba Semiconductor and Storage
SSM3J374R,LF
IXYS