SIHB11N80E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 12A D2PAK
$2.26
Available to order
Reference Price (USD)
1+
$2.26050
500+
$2.237895
1000+
$2.21529
1500+
$2.192685
2000+
$2.17008
2500+
$2.147475
Exquisite packaging
Discount
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The SIHB11N80E-GE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SIHB11N80E-GE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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