SIHD14N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 13A DPAK
$2.40
Available to order
Reference Price (USD)
1+
$2.60000
10+
$2.35600
100+
$1.90810
500+
$1.50052
1,000+
$1.25600
3,000+
$1.17449
6,000+
$1.13373
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIHD14N60E-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIHD14N60E-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVMFSW6D1N08HT1G
Taiwan Semiconductor Corporation
TSM60N900CH C5G
IXYS
IXTQ480P2
onsemi
FDD5N60NZTM
Infineon Technologies
AUIRLS3034-7TRL
Vishay Siliconix
SIR668DP-T1-RE3
Panjit International Inc.
PJA3402_R1_00001
onsemi
NTMFS6B03NT3G
STMicroelectronics
STL35N75LF3
Fairchild Semiconductor