SIHD3N50DT1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 3A DPAK
$0.39
Available to order
Reference Price (USD)
1+
$0.38610
500+
$0.382239
1000+
$0.378378
1500+
$0.374517
2000+
$0.370656
2500+
$0.366795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHD3N50DT1-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIHD3N50DT1-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVMFS5C426NAFT1G
Infineon Technologies
SPD07N60S5BTMA1
Infineon Technologies
IPB120N10S403ATMA1
IXYS
IXFH26N50P3
Diodes Incorporated
DMTH4005SCT
Fairchild Semiconductor
FQPF18N20V2
onsemi
FDS6375
Vishay Siliconix
SI2318DS-T1-BE3
Microchip Technology
MSC750SMA170B
Infineon Technologies