SIHF5N50D-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 5.3A TO220
$1.43
Available to order
Reference Price (USD)
1+
$1.52000
10+
$1.34700
100+
$1.06450
500+
$0.82556
1,000+
$0.65175
3,000+
$0.60830
5,000+
$0.57789
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHF5N50D-E3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIHF5N50D-E3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Toshiba Semiconductor and Storage
TK4A50D(STA4,Q,M)
Microchip Technology
TN2510N8-G
UnitedSiC
UJ4C075060B7S
Infineon Technologies
IPB011N04LGATMA1
Vishay Siliconix
IRLZ14PBF
Panjit International Inc.
PJP2NA90_T0_00001
Infineon Technologies
IPW65R190C7XKSA1
Infineon Technologies
IPB60R040C7ATMA1
onsemi
FDD8647L
onsemi