SIHFR9310-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 400V 1.8A DPAK
$0.33
Available to order
Reference Price (USD)
1+
$0.33495
500+
$0.3316005
1000+
$0.328251
1500+
$0.3249015
2000+
$0.321552
2500+
$0.3182025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHFR9310-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIHFR9310-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FCD7N60TM
Microchip Technology
APT22F120B2
Panjit International Inc.
PJQ5466A1-AU_R2_000A1
onsemi
NVTFS6H880NLWFTAG
Panjit International Inc.
PJQ2416_R1_00001
Nexperia USA Inc.
BUK7M4R3-40HX
Diodes Incorporated
DMP10H400SK3-13
Diodes Incorporated
DMTH10H025LK3Q-13
Fairchild Semiconductor
FQPF9N25C
Vishay Siliconix