SIHG17N80E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 15A TO247AC
$5.67
Available to order
Reference Price (USD)
1+
$5.99000
10+
$5.35200
100+
$4.38820
500+
$3.55340
1,000+
$2.99684
2,500+
$2.84700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIHG17N80E-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIHG17N80E-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
IXYS
IXFX150N30P3
onsemi
MMSF1310R2
Infineon Technologies
BSC097N06NSATMA1
Rectron USA
RM6005S4
Infineon Technologies
IPU95R1K2P7AKMA1
Diodes Incorporated
DMN2046U-7
Infineon Technologies
IPP60R099CPXKSA1
Alpha & Omega Semiconductor Inc.
AOD7N60
Diodes Incorporated
DMN2991UFO-7B
Diodes Incorporated