SIHG22N50D-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 22A TO247AC
$4.16
Available to order
Reference Price (USD)
1+
$4.40000
10+
$3.92700
100+
$3.22010
500+
$2.60752
1,000+
$2.19912
2,500+
$2.08916
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHG22N50D-E3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SIHG22N50D-E3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
onsemi
NTMFS4C302NT1G
IXYS
IXTT02N450HV
IXYS
IXTT170N10P
IXYS
IXTA2N100P-TRL
onsemi
FDV304P
UnitedSiC
UJ4C075060K4S
Renesas Electronics America Inc
RJK0204DPA-00#J53
Wolfspeed, Inc.
C3M0040120J1
IXYS
IXFK50N85X
Nexperia USA Inc.