SIHG24N80AEF-GE3
Vishay Siliconix
Vishay Siliconix
EF SERIES POWER MOSFET WITH FAST
$5.10
Available to order
Reference Price (USD)
1+
$5.10000
500+
$5.049
1000+
$4.998
1500+
$4.947
2000+
$4.896
2500+
$4.845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SIHG24N80AEF-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIHG24N80AEF-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Rohm Semiconductor
RW1E014SNT2R
Alpha & Omega Semiconductor Inc.
AOTS21319C
onsemi
FCP13N60N
IXYS
IXKT70N60C5-TUB
Rectron USA
RMP3N90LD
Infineon Technologies
IRF6619TR1
Vishay Siliconix
SIDR500EP-T1-RE3
Fairchild Semiconductor
FQI11P06TU
Vishay Siliconix
SUD15N15-95-E3
Harris Corporation