SIHK055N60EF-T1GE3
Vishay Siliconix
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
$9.46
Available to order
Reference Price (USD)
1+
$9.46000
500+
$9.3654
1000+
$9.2708
1500+
$9.1762
2000+
$9.0816
2500+
$8.987
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIHK055N60EF-T1GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIHK055N60EF-T1GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 236W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK®10 x 12
- Package / Case: 8-PowerBSFN
Related Products
Diodes Incorporated
DMN30H14DLY-13
Infineon Technologies
IRF1404PBF
onsemi
NTMJS1D0N04CTWG
Vishay Siliconix
SQS405ENW-T1_GE3
STMicroelectronics
STF11N60DM2
Micro Commercial Co
MCU18P10Y-TP
Diodes Incorporated
DMN3028L-13
Diodes Incorporated
ZXMP6A17GQTA
Fairchild Semiconductor
FQD5N50TM
onsemi