SIJH800E-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80-V (D-S) 175C MOSFET
$5.07
Available to order
Reference Price (USD)
1+
$5.07000
500+
$5.0193
1000+
$4.9686
1500+
$4.9179
2000+
$4.8672
2500+
$4.8165
Exquisite packaging
Discount
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Optimize your power electronics with the SIJH800E-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIJH800E-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
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