SIR438DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 60A PPAK SO-8
$2.04
Available to order
Reference Price (USD)
3,000+
$0.99855
6,000+
$0.96390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIR438DP-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIR438DP-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Microchip Technology
APL602B2G
onsemi
NVMFS5C460NWFT1G
STMicroelectronics
STK820
Fairchild Semiconductor
SFW9Z24TM
Rohm Semiconductor
RQ3E100BNTB1
Infineon Technologies
IRFH7446TRPBF
Vishay Siliconix
IRL640SPBF
Diodes Incorporated
ZXMP4A16GTA
onsemi
FCH072N60F
Infineon Technologies