SIR582DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80 V (D-S) MOSFET POWE
$1.74
Available to order
Reference Price (USD)
1+
$1.74000
500+
$1.7226
1000+
$1.7052
1500+
$1.6878
2000+
$1.6704
2500+
$1.653
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIR582DP-T1-RE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIR582DP-T1-RE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28.9A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IPP100N04S204AKSA2
IXYS
IXTH20N65X
STMicroelectronics
STD25N10F7
onsemi
ECH8305-TL-E
Vishay Siliconix
SIHB35N60E-GE3
STMicroelectronics
STF15NM65N
Linear Integrated Systems, Inc.
2N4351 TO-72 4L
Vishay Siliconix
SQJ457EP-T2_GE3
Renesas Electronics America Inc
2SK1628-E
Infineon Technologies