SIR688DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 60A PPAK SO-8
$2.10
Available to order
Reference Price (USD)
3,000+
$1.02550
6,000+
$0.98991
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIR688DP-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIR688DP-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3105 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Toshiba Semiconductor and Storage
2SK3566(STA4,Q,M)
Fairchild Semiconductor
FQPF46N15
Alpha & Omega Semiconductor Inc.
AOT1608L
Alpha & Omega Semiconductor Inc.
AOTF27S60L
Diodes Incorporated
ZXMN4A06GTA
Infineon Technologies
IRF7832TRPBF
Microchip Technology
DN2535N3-G-P013
Infineon Technologies
IPAN70R450P7SXKSA1
Diodes Incorporated
DMTH6016LFDFWQ-7R
Yangzhou Yangjie Electronic Technology Co.,Ltd