SIR880BDP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80-V (D-S) MOSFET POWE
$1.37
Available to order
Reference Price (USD)
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$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
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Discover the SIR880BDP-T1-RE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIR880BDP-T1-RE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), 70.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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