SIRA12DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 25A PPAK SO-8
$1.00
Available to order
Reference Price (USD)
3,000+
$0.41189
6,000+
$0.38516
15,000+
$0.37179
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SIRA12DP-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIRA12DP-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
IXYS
IXTA32P05T-TRL
IXYS
IXFX90N60X
Microchip Technology
VN0550N3-G-P013
Vishay Siliconix
SI4840BDY-T1-E3
onsemi
NTMT095N65S3H
Texas Instruments
CSD17559Q5
onsemi
NVMFS5C460NLAFT1G
IXYS
IXFY8N65X2
onsemi
MCH3377-TL-E
Vishay Siliconix