SIRA20DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 81.7A/100A PPAK
$1.65
Available to order
Reference Price (USD)
3,000+
$0.74620
6,000+
$0.71117
15,000+
$0.68614
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIRA20DP-T1-RE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SIRA20DP-T1-RE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
SPI15N65C3XKSA1
Infineon Technologies
IPI086N10N3GXKSA1
Alpha & Omega Semiconductor Inc.
AON7566
Vishay Siliconix
SIHFL9014TR-GE3
STMicroelectronics
STP24N60M6
NXP USA Inc.
PSMN3R7-30YLC,115
Fairchild Semiconductor
HUF75639S3_NL
onsemi
NTP75N03-006
Vishay Siliconix
SQ3427AEEV-T1_GE3
onsemi