SIRA28BDP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 18A/38A PPAK SO8
$0.60
Available to order
Reference Price (USD)
3,000+
$0.21227
6,000+
$0.19858
15,000+
$0.18488
30,000+
$0.17530
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIRA28BDP-T1-GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Diodes Incorporated
DMP2900UT-7
Diodes Incorporated
DMN67D7L-7
onsemi
SSN1N45BTA
Rohm Semiconductor
RX3G07CGNC16
Toshiba Semiconductor and Storage
TK8A65D(STA4,Q,M)
Diotec Semiconductor
DI045N03PT-AQ
Renesas Electronics America Inc
2SK2372(2)-A
Nexperia USA Inc.
PHB45NQ15T,118
STMicroelectronics
STL4N10F7
Diodes Incorporated