SIRB40DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 40V POWERPAK SO8
$1.47
Available to order
Reference Price (USD)
3,000+
$0.66420
6,000+
$0.63302
15,000+
$0.61074
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the SIRB40DP-T1-GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SIRB40DP-T1-GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
- Power - Max: 46.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
onsemi
FDML7610S
Diodes Incorporated
DMT3020LFDBQ-13
Micro Commercial Co
MCQ07NP03A-TP
Panjit International Inc.
PJQ5844-AU_R2_000A1
Advanced Linear Devices Inc.
ALD110800APCL
Diodes Incorporated
DMT3020LSDQ-13
onsemi
FDS6986AS
onsemi
NVMFD5483NLWFT3G
Alpha & Omega Semiconductor Inc.
AON6926
Microchip Technology