SIS108DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 6.7A/16A PPAK
$0.43
Available to order
Reference Price (USD)
1+
$0.43445
500+
$0.4301055
1000+
$0.425761
1500+
$0.4214165
2000+
$0.417072
2500+
$0.4127275
Exquisite packaging
Discount
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Meet the SIS108DN-T1-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIS108DN-T1-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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