SIS990DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 100V 12.1A 1212-8
$0.97
Available to order
Reference Price (USD)
3,000+
$0.43624
6,000+
$0.41576
15,000+
$0.40113
Exquisite packaging
Discount
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Choose the SIS990DN-T1-GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SIS990DN-T1-GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12.1A
- Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
- Power - Max: 25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual
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