SISS28DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 60A PPAK1212-8S
$0.90
Available to order
Reference Price (USD)
3,000+
$0.43624
6,000+
$0.41576
15,000+
$0.40113
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SISS28DN-T1-GE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SISS28DN-T1-GE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.52mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
Related Products
Infineon Technologies
IRF3805STRLPBF
IXYS
IXTA260N055T2
Panjit International Inc.
PJW5P06A_R2_00001
Vishay Siliconix
IRLIZ44GPBF
Microchip Technology
APT77N60SC6
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2101W-F2-0000HF
Toshiba Semiconductor and Storage
TK290P60Y,RQ
Nexperia USA Inc.
PMN30UNX
Vishay Siliconix
SIR578DP-T1-RE3
Infineon Technologies