SISS66DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 49.1/178.3A PPAK
$0.72
Available to order
Reference Price (USD)
1+
$0.71775
500+
$0.7105725
1000+
$0.703395
1500+
$0.6962175
2000+
$0.68904
2500+
$0.6818625
Exquisite packaging
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Discover the SISS66DN-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SISS66DN-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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