SIZ200DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH DUAL 30V
$1.08
Available to order
Reference Price (USD)
3,000+
$0.48708
6,000+
$0.46421
15,000+
$0.44788
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the SIZ200DT-T1-GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SIZ200DT-T1-GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
- Power - Max: 4.3W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (3.3x3.3)
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