SIZ270DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Description:

DUAL N-CHANNEL 100-V (D-S) MOSFE

Datasheet:

SIZ270DT-T1-GE3 Datasheet

$1.48

Available to order

Reference Price (USD)

$1.48000

500+

$1.4652

1000+

$1.4504

1500+

$1.4356

2000+

$1.4208

2500+

$1.406

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

The SIZ270DT-T1-GE3 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SIZ270DT-T1-GE3 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.

Specifications

Product Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)