SIZ300DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 11A POWERPAIR
$1.18
Available to order
Reference Price (USD)
3,000+
$0.49896
6,000+
$0.47401
15,000+
$0.45619
Exquisite packaging
Discount
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Choose the SIZ300DT-T1-GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SIZ300DT-T1-GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A, 28A
- Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 16.7W, 31W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair®
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Vishay Siliconix