SIZ340BDT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 30-V (D-S) MOSFET
$0.78
Available to order
Reference Price (USD)
1+
$0.78000
500+
$0.7722
1000+
$0.7644
1500+
$0.7566
2000+
$0.7488
2500+
$0.741
Exquisite packaging
Discount
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Elevate your electronics with the SIZ340BDT-T1-GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SIZ340BDT-T1-GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
- Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
- Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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